Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes with addition of nitrogen, argon, helium and other gases) that dislodge portions of the material from the exposed surface. A common type of dry etching is reactive-ion etching. Unlike with many (but not all, see isotropic etching) of the wet chemical etchants used in wet etching, the dry etching process typically etches directionally or anisotropically.
MINAN provide DRIE etching service for microfluidic patterns. Dry etching feature size:
1. Aspect rato: 20:1
2. Wafer size 2in~8in with uniformity better than +/-2%, wafer to wafer variation is better than +/-5%,
3. Process repeatability is better than
3. Minimum hight 10um +/-3%
Lead time: 2 weeks.